IRF7220PBF International Rectifier, IRF7220PBF Datasheet
IRF7220PBF
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IRF7220PBF Summary of contents
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... Surface Mount Available in Tape & Reel l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ...
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IRF7220 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VG S TOP - 4.5V - 4.0V - 3.0V - 2.0V - 1.8V - 1. TTO M - 1.2V 300µs PULSE W IDTH T = 25° ...
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IRF7220 0V 1kHz ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...
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IRF7220 SO-8 Package Details (. ...
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Tape and Reel ...