IRF7220PBF International Rectifier, IRF7220PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7220PBF
• Description: P CHANNEL MOSFET, -14V, 11A, SOIC
• Manufacturer: International Rectifier

Specifications of IRF7220PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: -14V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Channel Type: P
• Current, Drain: ±11 A
• Gate Charge, Total: 84 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.0082 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 140 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 8.4 S
• Voltage, Breakdown, Drain To Source: -14 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 11 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Fall Time: 1040 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 420 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
12
10
10
0.0001
8
6
4
2
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
300
250
200
150
100
50
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D =
2. Peak T = P
Notes:
50
1
Vs. Drain Current
J
J
75
DM
x Z
t / t
1
thJA
IRF7220
P
2
100
10
DM
+ T
TOP
BOTTOM
A
t
1
t
2
125
-4.9A
-8.8A
°
-11A
I D
5
100
150