IRF730PBF Vishay, IRF730PBF Datasheet - Page 6

• Manufacturer Part Number: IRF730PBF
• Description: N CHANNEL MOSFET, 400V, 5.5A TO-220
• Manufacturer: Vishay

Specifications of IRF730PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF730PBF

IRF730, SiHF730
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
10 V
p
Fig. 13a - Basic Gate Charge Waveform
V
to obtain
G
AS
R
10 V
Q
G
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
91047_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
700
500
400
300
200
100
600
0
25
V
DD
+
-
= 50 V
Starting T
V
DD
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
2.5 A
3.5 A
5.5 A
Current regulator
I
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0508-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91047
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS