IRF730 Vishay, IRF730 Datasheet
IRF730
Specifications of IRF730
IRF730IR
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IRF730 Summary of contents
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... TO-220 IRF730PbF SiHF730-E3 IRF730 SiHF730 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 5.5 A (see fig. 12 ≤ 150 °C. J IRF730, SiHF730 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 400 DS V ± 5 3 0.59 E 290 AS I 5.5 ...
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... IRF730, SiHF730 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Output Characteristics, T Document Number: 91047 S09-0267-Rev. B, 23-Feb-09 4 µs Pulse Width ° 91047_03 = 25 ° µs Pulse Width T = 150 ° 91047_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF730, SiHF730 Vishay Siliconix 1 10 ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig ...
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... IRF730, SiHF730 Vishay Siliconix 1500 MHz iss rss 1200 oss 900 600 300 Drain-to-Source Voltage ( 91047_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 320 200 Total Gate Charge (nC) 91047_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91047_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91047 S09-0267-Rev. B, 23-Feb-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF730, SiHF730 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF730, SiHF730 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 700 600 500 400 300 200 100 100 50 Starting T , Junction Temperature (°C) 91047_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D Top 2.5 A 3.5 A Bottom 5.5 A 125 150 Current regulator Same type as D.U.T. 50 kΩ ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF730, SiHF730 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...