IRF9610PBF Vishay, IRF9610PBF Datasheet - Page 4
![P CH MOSFET, -200V, 1.8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9610PBF
Manufacturer Part Number
IRF9610PBF
Description
P CH MOSFET, -200V, 1.8A, TO-220
Manufacturer
Vishay
Specifications of IRF9610PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9610PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF9610, SiHF9610
Vishay Siliconix
www.vishay.com
4
91080_06
91080_07
91080_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Transconductance vs. Drain Current
- 10.0
- 5.0
- 2.0
- 1.0
- 0.5
- 0.1
1.25
1.15
1.05
0.95
0.85
0.75
- 0.2
2.0
1.6
1.2
0.8
0.4
0.0
- 2.0
- 40
Fig. 8 - Breakdown Voltage vs. Temperature
0
80 µs Pulse Test
V
DS
T
J
> I
= 150
V
- 0.48
D(on)
- 3.2
SD
T
0
J
, Source-to-Drain Voltage (V)
, Junction Temperature (°C)
°
x R
C
I
D ,
DS(on)
Drain Current (A)
- 0.96
- 4.4
40
max.
T
J
= 25
- 1.44
- 5.6
80
°
C
T
T
T
- 1.92
- 6.8
J
J
J
120
= - 55
= 25
= 125
°
C
°
°
C
C
- 2.40
- 8.0
160
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
91080_11
91080_09
91080_10
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 9 - Normalized On-Resistance vs. Temperature
500
400
300
200
100
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
8
4
0
0
- 40
0
0
I
I
V
D
D
GS
= - 1.8 A
= - 0.6 A
= - 10 V
C
C
C
V
iss
rss
oss
- 10
DS
T
Q
0
J
, Junction Temperature (°C)
, Drain-to-Source Voltage (V)
G
2
, Total Gate Charge (nC)
V
DS
- 20
40
= - 40 V
V
C
C
C
GS
iss
rss
oss
V
4
= 0 V, f = 1 MHz
= C
= C
DS
= C
≈ C
S09-0046-Rev. A, 19-Jan-09
- 30
= - 60 V
gs
80
gd
ds
gs
Document Number: 91080
+ C
V
+
+ C
DS
C
C
gd
gs
gd
gs
For test circuit
see figure 18
= - 100 V
, C
6
, C
+ C
120
- 40
ds
gd
gd
Shorted
160
- 50
8