IRF9610PBF Vishay, IRF9610PBF Datasheet - Page 5
![P CH MOSFET, -200V, 1.8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9610PBF
Manufacturer Part Number
IRF9610PBF
Description
P CH MOSFET, -200V, 1.8A, TO-220
Manufacturer
Vishay
Specifications of IRF9610PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9610PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
V
GS
91080_12
= - 10 V
Fig. 12 - Typical On-Resistance vs. Drain Current
2
4
1
Fig. 15 - Clamped Inductive Test Circult
7
6
5
3
0
Vary t
required I
0
R
2.0 µs duration. Initial T
(Heating effect of
t
p
DS(on)
p
to obtain
- 1
L
measured with current pulse of
D.U.T.
- 2
I
D
I
, Drain Current (A)
L
V
DD
2.0 µs pulse is minimal.)
- 3
= 0.5 V
J
=
V
GS
- 4
25 °C.
DS
91080_14
= - 10 V
V
- 5
DS
Fig. 14 - Power vs. Temperature Derating Curve
V
GS
E
20
15
10
5
0
C
= - 20 V
= 0.75 V
0
- 6
0.05 Ω
E
C
V
20
L
DD
- 7
DS
T
C
40
, Case Temperature (°C)
+
-
60
80
91080_13
100
Fig. 13 - Maximum Drain Current vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
120
25
Fig. 16 - Clamped Inductive Waveforms
140
I
50
L
T
C
, Case Temperature (°C)
t
p
IRF9610, SiHF9610
75
E
C
100
Vishay Siliconix
125
V
DS
www.vishay.com
V
150
DD
5