IRF9620PBF Vishay, IRF9620PBF Datasheet

P CH MOSFET, -200V, 3.5A, TO-220

IRF9620PBF

Manufacturer Part Number
IRF9620PBF
Description
P CH MOSFET, -200V, 3.5A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF9620PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-3.5A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
1.5Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9620PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9620PBF
Manufacturer:
VISHAY
Quantity:
256
Part Number:
IRF9620PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF9620PBF
Quantity:
5 000
Company:
Part Number:
IRF9620PBF
Quantity:
25 780
Company:
Part Number:
IRF9620PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. I
c. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 - 3.5 A, dI/dt  95 A/μs, V
()
TO-220AB
G
a
D
S
b
V
DD
GS
 V
= - 10 V
DS
G
, T
P-Channel MOSFET
J
Single
- 200
 150 °C.
22
12
10
This datasheet is subject to change without notice.
C
S
D
= 25 °C, unless otherwise noted)
Power MOSFET
V
1.5
GS
at - 10 V
6-32 or M3 screw
T
C
for 10 s
= 25 °C
T
T
C
TO-220AB
IRF9620PbF
SiHF9620-E3
IRF9620
SiHF9620
C
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
device
I
P
, T
DM
I
DS
GS
D
D
stg
design,
IRF9620, SiHF9620
- 55 to + 150
LIMIT
- 200
± 20
- 3.5
- 2.0
- 5.0
300
0.32
- 14
1.1
40
10
low
www.vishay.com/doc?91000
Vishay Siliconix
c
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
°C
W
V
A
Available
and
1

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IRF9620PBF Summary of contents

Page 1

... The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance D and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620 = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... DS(on) max. D(on) 0 91082_04 Single Pulse (Transient Thermal Impedence Square Wave Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF9620, SiHF9620 Vishay Siliconix 80 µs Pulse Test 10 Drain-to-Source Voltage (V) DS Fig Typical Saturation Characteristics Operation in this area limited by R DS(on) 100 µs ...

Page 4

... IRF9620, SiHF9620 Vishay Siliconix 4.0 80 µs Pulse Test V > max. DS D(on) DS(on) 3.2 2.4 1.6 0.8 0 Drain Current ( 91082_06 Fig Typical Transconductance vs. Drain Current - ° 150 C - 1.0 J ° 0.5 - 0.2 - 0.1 - 2.0 - 3.2 - 4 Source-to-Drain Voltage (V) 91082_07 SD Fig Typical Source-Drain Diode Forward Voltage 1 ...

Page 5

... Fig Clamped Inductive Test Circuit Fig Clamped Inductive Waveforms 125 150 Fig. 17a - Switching Time Test Circuit 100 120 140 Fig. 17b - Switching Time Waveforms This datasheet is subject to change without notice. IRF9620, SiHF9620 Vishay Siliconix L to obtain D.U. 0.05 Ω 0 ...

Page 6

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91082. ...

Page 7

... F H(1) J(1) L L(1) Ø ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 Note * 1.62 mm (dimension including protrusion) Heatsink hole for HVM C J(1) Package Information Vishay Siliconix MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.25 4.65 0.167 0.183 0.69 1.01 0.027 0.040 1.20 1.73 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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