IRF9620PBF Vishay, IRF9620PBF Datasheet - Page 5

• Manufacturer Part Number: IRF9620PBF
• Description: P CH MOSFET, -200V, 3.5A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9620PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9620PBF

Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91082_12
91082_13
Fig. 13 - Maximum Drain Current vs. Case Temperature
91082_14
Fig. 12 - Typical On-Resistance vs. Drain Current
Fig. 14 - Power vs. Temperature Derating Curve
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
40
35
30
25
20
15
10
5
4
3
1
0
0
5
25
0
0
R
pulse of 2.0 µs duration. Initial
T
2.0 µs pulse is minimal.)
J
DS(on)
=
25 °C. (Heating effect of
20
measured with current
- 4
50
T
T
C
C
, Case Temperature (°C)
40
I
, Case Temperature (°C)
D
, Drain Current (A)
- 8
75
V
60
GS
= - 10 V
80
- 12
100
100
V
GS
This datasheet is subject to change without notice.
- 16
125
= - 20 V
120
140
- 20
150
V
GS
= - 10 V
Fig. 15 - Clamped Inductive Test Circuit
Fig. 16 - Clamped Inductive Waveforms
Vary t
required I
Fig. 17a - Switching Time Test Circuit
10 %
90 %
Fig. 17b - Switching Time Waveforms
V
V
t
GS
DS
p
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
p
G
to obtain
- 10 V
V
L
t
GS
d(on)
I
L
V
D.U.T.
DS
IRF9620, SiHF9620
I
t
t
L
V
r
p
DD
= 0.5 V
D.U.T.
E
www.vishay.com/doc?91000
DS
C
R
Vishay Siliconix
D
t
d(off)
V
DS
E
V
t
f
C
DS
-
+
www.vishay.com
= 0.75 V
V
DD
0.05 Ω
E
C
V
V
DD
L
DD
DS
-
+
5