IRFB11N50APBF Vishay, IRFB11N50APBF Datasheet - Page 2

• Manufacturer Part Number: IRFB11N50APBF
• Description: N CHANNEL MOSFET, 500V, 11A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB11N50APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.52Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB11N50APBF

IRFB11N50A, SiHFB11N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
oss
effective is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
C
R
V
R
oss
t
t
R
I
I
C
C
R
V
C
V
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
SM
I
t
thCS
t
on
thJA
thJC
DS
oss
oss
t
SD
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
V
GS
GS
GS
J
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
T
= 25 °C, I
G
= 10 V
= 0 V
= 10 V
J
= 9.1 Ω, R
= 400 V, V
= 25 °C, I
V
V
V
TYP.
V
0.50
TEST CONDITIONS
V
f = 1.0 MHz, see fig. 5
DS
DS
GS
DD
DS
-
-
= 500 V, V
= V
F
= 0 V, I
= 250 V, I
V
= 50 V, I
V
oss
V
= 11 A, dI/dt = 100 A/µs
GS
V
DS
V
S
GS
GS
D
GS
I
DS
DS
D
while V
= 11 A, V
= ± 30 V
V
= 22 Ω, see fig. 10
= 25 V,
, I
= 0 V,
= 11 A, V
see fig. 6 and 13
DS
= 0 V, T
= 400 V, f = 1.0 MHz
D
= 1.0 V, f = 1.0 MHz
D
D
= 250 µA
= 250 µA
= 0 V to 400 V
I
D
GS
D
= 6.6 A
= 11 A
DS
= 6.6 A
= 0 V
GS
is rising from 0 to 80 % V
J
DS
G
= 150 °C
= 0 V
= 400 V
b
MAX.
b
0.75
b
D
S
b
62
-
b
MIN.
500
2.0
6.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
DS
TYP.
1423
2000
208
510
8.1
3.4
55
97
14
35
32
28
.
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.52
S
250
770
4.0
1.5
5.1
25
52
13
18
11
44
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V