IRFB11N50APBF Vishay, IRFB11N50APBF Datasheet

N CHANNEL MOSFET, 500V, 11A, TO-220

IRFB11N50APBF

Manufacturer Part Number
IRFB11N50APBF
Description
N CHANNEL MOSFET, 500V, 11A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFB11N50APBF

Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
520mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1423pF @ 25V
Power - Max
170W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.52 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
170000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.52Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB11N50APBF

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l
Document Number: 91094
l
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l
l
l
l
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l
I
I
I
P
V
dv/dt
T
T
Notes 
D
D
DM
J
STG
D
GS
@ T
@ T
@T
Two Transistor Forward
Half & Full Bridge
Power Factor Correction Boost
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
C
C
C
= 25°C
= 100°C
= 25°C
through … are on page 8
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Continuous Drain Current, V
Power Dissipation
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
TO-220AB
-55 to + 150
Rds(on) max
Max.
170
± 30
7.0
1.3
6.9
11
44
0.52Ω
®
Power MOSFET
G
D
S
www.vishay.com
Units
W/°C
11/11/03
V/ns
11A
°C
W
A
V
I
D
1

Related parts for IRFB11N50APBF

IRFB11N50APBF Summary of contents

Page 1

... Document Number: 91094 SMPS MOSFET HEXFET V DSS 500V TO-220AB @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) ® Power MOSFET Rds(on) max I D 0.52Ω 11A Max. Units 11 7 170 W 1.3 W/°C ± 6.9 V/ns °C 11/11/03 www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µA D „ 250µ 0V 150° Conditions = 6.6A D „ = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz DS … 400V DS Max. Units 275 Max. Units 0.75 ––– °C/W 62 Conditions 11A „ 11A www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH 4. 150 C ° Drain-to-Source Voltage (V) DS 11A V = 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 6. 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms ° ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 50 10000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91094 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Fig 12c. Maximum Avalanche Energy 660 640 620 600 + 580 0.0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 4.9A 7.0A BOTTOM 11A 50 75 100 125 ° J Vs. Drain Current 1.0 2.0 3.0 4.0 5.0 6 Avalanche Current (A) av Vs. Avalanche Current www.vishay.com 150 A 7.0 6 ...

Page 7

... D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Document Number: 91094 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% Fig 14. For N-Channel HEXFETS + - V =10V www.vishay.com 7 ...

Page 8

... V is rising from 0 to 80% V oss DS , (BR)DSS Data and specifications subject to change without notice. LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 2- COLLECTOR 3 - SOURCE 3- EMITTER 4 - DRAIN 4- COLLECTOR P ART DAT E CODE 1997 INE C DSS TAC Fax: (310) 252-7903 www.vishay.com 11/03 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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