IRFB20N50KPBF Vishay, IRFB20N50KPBF Datasheet
IRFB20N50KPBF
Specifications of IRFB20N50KPBF
Available stocks
Related parts for IRFB20N50KPBF
IRFB20N50KPBF Summary of contents
Page 1
... E Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Document Number: 91101 IRFB20N50KPbF SMPS MOSFET HEXFET V DSS 500V @ 10V GS @ 10V GS - 150 Typ. ––– ––– ––– Typ. ––– ...
Page 2
... Fig. 10 25V DS pF ƒ = 1.0MHz, See Fig 0V 1.0V, ƒ = 1.0MHz 0V 400V, ƒ = 1.0MHz 0V 400V Conditions MOSFET symbol showing the integral reverse G p-n junction diode 25° 20A 25° 20A J F µC di/dt = 100A/µs S ≤ (BR)DSS www.vishay.com ...
Page 3
... Fig 4. Normalized On-Resistance VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 10V GS - 100 120 140 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 160 3 ...
Page 4
... Single Pulse 0.1 1.0 1.2 1 Fig 8. Maximum Safe Operating Area 21A V = 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE 100 Q , Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED (on) 100µsec 1msec 10msec 10 100 1000 Drain-toSource Voltage (V) www.vishay.com 120 10000 4 ...
Page 5
... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91101 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...
Page 6
... Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit I D TOP 9.4A 17A BOTTOM 20A 50 75 100 125 J Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ .2µF .3µ D.U. 3mA Current Sampling Resistors www.vishay.com 150 DS 6 ...
Page 7
... D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Document Number: 91101 + • • • - • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% Fig 14. For N-Channel HEXFETS + - * V =10V www.vishay.com 7 ...
Page 8
... LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C TAC Fax: (310) 252-7903 2/04 www.vishay.com 8 ...
Page 9
... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...