IRFB20N50KPBF Vishay, IRFB20N50KPBF Datasheet - Page 5

• Manufacturer Part Number: IRFB20N50KPBF
• Description: N CH MOSFET, 500V, 20A, TO-220AB
• Manufacturer: Vishay

Specifications of IRFB20N50KPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2870pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 280000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB20N50KPBF

Document Number: 91101
0.001
0.01
0.1
20
16
12
0.00001
8
4
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
C
(THERMAL RESPONSE)
75
0.0001
SINGLE PULSE
100
125
t , Rectangular Pulse Duration (sec)
1
0.001
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
J
= P
≤ 0.1 %
≤ 1
DM
x Z
t / t
1
0.1
thJC
P
2
DM
t
d(off)
+ T
C
www.vishay.com
t
1
t
f
t
2
+
-
1
5