IRFB9N60APBF Vishay, IRFB9N60APBF Datasheet - Page 3

• Manufacturer Part Number: IRFB9N60APBF
• Description: N CHANNEL MOSFET, 600V, 9.2A TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB9N60APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.75Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB9N60APBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91103
S11-0514-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
100
0.1
10
10
1
1
0.1
1
TOP
BOTTOM
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
10
20µs PULSE WIDTH
T = 150 C
20µs PULSE WIDTH
T = 25 C
J
J
4.7V
10
4.7V
°
°
This datasheet is subject to change without notice.
100
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
4.0
-60 -40 -20
I =
T = 150 C
D
Fig. 3 - Typical Transfer Characteristics
J
IRFB9N60A, SiHFB9N60A
9.2A
5.0
V
T , Junction Temperature ( C)
GS
°
J
, Gate-to-Source Voltage (V)
0
T = 25 C
J
6.0
20 40 60
°
7.0
V
20µs PULSE WIDTH
www.vishay.com/doc?91000
DS
Vishay Siliconix
80 100 120 140 160
8.0
= 50V
V
°
GS
9.0
www.vishay.com
=
10V
10.0
3