IRFB9N60APBF Vishay, IRFB9N60APBF Datasheet - Page 4

• Manufacturer Part Number: IRFB9N60APBF
• Description: N CHANNEL MOSFET, 600V, 9.2A TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB9N60APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.75Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB9N60APBF

IRFB9N60A, SiHFB9N60A
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
100
20
16
12
10
8
4
0
1
0
1
I =
D
9.2A
V
DS
10
Q , Total Gate Charge (nC)
G
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
10
= 0V,
= C
= C
= C
20
gs
gd
ds
+ C
+ C
gd
gd
f = 1MHz
C
C
C
V
V
V
FOR TEST CIRCUIT
DS
DS
DS
30
iss
oss
rss
, C
SEE FIGURE
100
= 480V
= 300V
= 120V
ds
400V
SHORTED
40
This datasheet is subject to change without notice.
13
1000
50
A
1000
100
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
0.1
10
10
1
1
0.2
10
T
T
Single Pulse
C
J
Fig. 8 - Maximum Safe Operating Area
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
V
T = 150 C
SD
J
DS
°
°
0.5
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
100
°
BY R
0.7
DS(on)
T = 25 C
J
S11-0514-Rev. C, 21-Mar-11
10us
100us
1ms
10ms
www.vishay.com/doc?91000
1000
Document Number: 91103
°
1.0
V
GS
= 0 V
10000
1.2