IRLZ14PBF Vishay, IRLZ14PBF Datasheet

N CHANNEL MOSFET, 60V, 10A, TO-220

IRLZ14PBF

Manufacturer Part Number
IRLZ14PBF
Description
N CHANNEL MOSFET, 60V, 10A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRLZ14PBF

Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 6A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
10 A
Power Dissipation
43000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
26 ns
Rise Time
110 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.2Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±10V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLZ14PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLZ14PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRLZ14PBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRLZ14, SiHLZ14 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90414
S10-2554-Rev. B, 08-Nov-10
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
PAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 10 A, dI/dt  90 A/μs, V
= 25 V, starting T
(TO-262)
()
G
D
S
G
a, e
e
D
J
D
2
= 25 °C, L = 790 μH, R
PAK (TO-263)
S
c, e
DD
b, e
V
 V
GS
DS
= 5 V
, T
J
D
SiHLZ14S-GE3
IRLZ14SPbF
SiHLZ14S-E3
IRLZ14S
SiHLZ14S
G
 175 °C.
Single
2
PAK (TO-263)
8.4
3.5
6.0
60
N-Channel MOSFET
g
= 25 , I
C
= 25 °C, unless otherwise noted)
Power MOSFET
D
S
0.20
V
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
GS
AS
at 5 V
= 10 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
D
SiHLZ14STRL-GE3
-
-
-
-
T
2
T
C
PAK (TO-263)
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Advanced Process Technology
• Surface Mount (IRLZ14S, SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient reliable device for use in a wide
variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRLZ44L, SiHLZ44L) is available
for low-profile applications.
Definition
2
PAK is a surface mount power package capable of
SYMBOL
T
a
dV/dt
J
V
V
E
I
, T
P
DM
I
GS
DS
AS
D
D
stg
D
SiHLZ14STRR-GE3
IRLZ14STRRPbF
SiHLZ14STR-E3
IRLZ14TRR
SiHLZ14STR
2
PAK (TO-262)
a
- 55 to + 175
a
LIMIT
300
± 10
0.29
a
7.2
3.7
4.5
60
10
40
68
43
a
Vishay Siliconix
d
I
-
-
-
IRLZ14L
SiHLZ14L
2
PAK (TO-262)
www.vishay.com
UNIT
W/°C
V/ns
2
mJ
°C
W
PAK is
V
A
1

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IRLZ14PBF Summary of contents

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... Fast Switching 6.0 • Compliant to RoHS Directive 2002/95/EC Single DESCRIPTION Third generation Power MOSFETs from Vishay utilize D advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...

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... IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 90414 S10-2554-Rev. B, 08-Nov-10 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature Vishay Siliconix www.vishay.com 3 ...

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... IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90414 S10-2554-Rev. B, 08-Nov-10 ...

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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90414 S10-2554-Rev. B, 08-Nov-10 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?90414. ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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