IRLZ14PBF Vishay, IRLZ14PBF Datasheet - Page 2

• Manufacturer Part Number: IRLZ14PBF
• Description: N CHANNEL MOSFET, 60V, 10A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRLZ14PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 10 A
• Power Dissipation: 43000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 26 ns
• Rise Time: 110 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±10V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRLZ14PBF

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
S
g
rr
/T
J
Between lead, and center of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
GS
V
R
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
g
Reference to 25 °C, I
J
= 5 V
= 4 V
= 5 V
= 12 , R
= 25 °C, I
= 48 V, V
V
V
f = 1.0 MHz, see fig. 5
V
V
V
TYP.
TEST CONDITIONS
DS
GS
DS
DS
DD
-
-
F
= V
= 0 V, I
V
= 60 V, V
= 25 V, I
= 30 V, I
V
= 10 A, dI/dt = 100 A/μs
V
GS
D
DS
S
GS
GS
GS
= 2.8 , see fig. 10
I
D
= 10 A, V
= ± 10 V
= 25 V,
, I
= 0 V, T
= 0 V,
see fig. 6 and 13
= 10 A, V
D
D
D
D
= 250 μA
= 250 μA
GS
I
I
D
D
= 6.0 A
= 10 A,
= 6.0 A
= 5.0 A
= 0 V
D
J
GS
= 1 mA
= 150 °C
DS
G
= 0 V
= 48 V,
b
b
b
MAX.
b
b
D
S
3.5
40
b
MIN.
1.0
3.5
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2554-Rev. B, 08-Nov-10
Document Number: 90414
TYP.
0.07
400
170
110
340
9.3
7.5
42
17
26
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.28
250
130
650
2.0
0.2
8.4
3.5
6.0
1.6
S
25
10
40
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
nC
nA
μA
pF
ns
ns

S
A
V
V
V