IRLZ14PBF Vishay, IRLZ14PBF Datasheet - Page 2

• Manufacturer Part Number: IRLZ14PBF
• Description: N CHANNEL MOSFET, 60V, 10A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRLZ14PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 10 A
• Power Dissipation: 43000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 26 ns
• Rise Time: 110 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±10V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRLZ14PBF

IRLZ14, SiHLZ14
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
R
R
t
t
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
Q
thCS
thJC
DS
g
L
L
t
thJA
SM
I
t
t
DS
oss
t
SD
on
rss
iss
gd
S
rr
fs
gs
r
D
f
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
GS
V
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
Reference to 25 °C, I
MIN.
= 5.0 V
= 4.0 V
= 5.0 V
J
= 25 °C, I
-
-
-
= 48 V, V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
V
R
V
T
DS
GS
DS
DS
DD
g
J
dI/dt = 100 A/μs
= 25 °C, I
= 12 Ω, R
= V
= 25 V, I
= 0 V, I
V
= 60 V, V
= 30 V, I
V
see fig. 10
GS
V
DS
S
GS
GS
GS
I
= 10 A, V
= ± 10 V
D
, I
= 25 V,
= 0 V, T
= 0 V,
see fig. 6 and 13
= 10 A, V
D
D
D
F
= 250 μA
D
= 250 μA
D
GS
I
I
= 6.0 A
D
D
= 2.8 Ω
= 10 A,
= 10 A
TYP.
b
0.50
= 6.0 A
= 5.0 A
D
= 0 V
-
-
J
GS
= 1 mA
b
G
= 150 °C
G
DS
= 0 V
b
= 48 V
b
b
D
S
b
D
S
b
MIN.
MAX.
1.0
3.5
60
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
62
-
S11-0519-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91325
0.070
TYP.
0.34
400
170
110
9.3
4.5
7.5
42
17
26
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.20
0.28
0.65
250
130
2.0
8.4
3.5
6.0
1.6
25
10
40
S
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
and L
UNIT
D
V/°C
nC
nH
μC
)
nA
μA
pF
ns
ns
Ω
S
A
V
V
V