SI2302ADS-T1-GE3 Vishay, SI2302ADS-T1-GE3 Datasheet

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SI2302ADS-T1-GE3

Manufacturer Part Number
SI2302ADS-T1-GE3
Description
N CH MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI2302ADS-T1-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
2.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
950mV
Power Dissipation Pd
700mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2302ADS-T1-GE3
Manufacturer:
VISHAY
Quantity:
970
Part Number:
SI2302ADS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2302ADS-T1-GE3
Quantity:
70 000
Notes:
a. Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web:
Document Number: 71831
S10-0047-Rev. I, 11-Jan-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
20
(V)
a
a
0.060 at V
0.115 at V
R
J
= 150 °C)
DS(on)
a
GS
GS
N-Channel 2.5-V (G-S) MOSFET
(Ω)
= 4.5 V
= 2.5 V
a
Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free)
a
A
www.vishay.com/www/product/spice.htm
Steady State
= 25 °C, unless otherwise noted
T
T
T
T
G
A
A
A
A
I
S
t ≤ 5 s
D
2.4
2.0
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(A)
1
2
Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Si2302ADS (2A)*
* Marking Code
(SOT-23)
Top View
TO-236
Symbol
FEATURES
Symbol
T
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
R
J
V
V
I
thJA
P
, T
I
DM
I
DS
GS
D
S
3
Definition
D
stg
D
Typical
0.94
0.57
115
140
5 s
2.4
1.9
0.9
- 55 to 150
± 8
20
10
Steady State
Maximum
0.46
140
175
2.1
1.7
0.6
0.7
Vishay Siliconix
Si2302ADS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI2302ADS-T1-GE3 Summary of contents

Page 1

... S10-0047-Rev. I, 11-Jan-10 FEATURES • Halogen-free According to IEC 61249-2-21 I (A) D Definition 2.4 • Compliant to RoHS Directive 2002/95/EC 2.0 TO-236 (SOT-23 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ...

Page 2

... Si2302ADS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71831 S10-0047-Rev. I, 11-Jan- °C, unless otherwise noted 1 600 500 400 300 200 100 Si2302ADS Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si2302ADS Vishay Siliconix TYPICAL CHARACTERISTICS T 100 150 ° 0.10 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.2 0 0.0 - 0.1 - 0.2 - 0.3 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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