SI2302ADS Vishay Semiconductors, SI2302ADS Datasheet
SI2302ADS
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SI2302ADS Summary of contents
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... Halogen-free Option Available I (A) D 2.4 2.0 TO-236 (SOT-23 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...
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... Si2302ADS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge ...
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... Document Number: 71831 S-80642-Rev. H, 24-Mar- °C, unless otherwise noted 1 600 500 400 300 200 100 Si2302ADS Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss ...
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... Si2302ADS Vishay Siliconix TYPICAL CHARACTERISTICS T 100 150 ° 0.10 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.2 0 0.0 - 0.1 - 0.2 - 0.3 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...