SI4431BDY-T1-GE3 Vishay, SI4431BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4431BDY-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI4431BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 1.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4431BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.05
0.02
Single Pulse
0.2
0.1
0
Threshold Voltage
T
J
- T emperature (°C)
10
2 5
I
D
- 3
= 250 µA
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
7 5
0.01
100
0.1
10
10
100
1
0.1
- 2
Limited by R
* V
Limited
I
125
D(on)
GS
Single Pulse
T
> minimum V
A
V
= 25 °C
DS
150
Square Wave Pulse Duration (s)
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
10
1
- 1
GS
BVDSS Limited
at which R
DS(on)
10
50
40
30
20
10
1
0
10
I
DM
is specified
- 3
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
- 2
100
1 0
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
- 1
- T
Time (s)
t
1
A
S09-0131-Rev. C, 02-Feb-09
= P
t
2
Document Number: 72092
1
DM
Z
th J A
100
th J A
t
t
1
2
(t )
10
= 70 °C/W
100
600
600