SI4431BDY-T1-E3/BKN Siliconix / Vishay, SI4431BDY-T1-E3/BKN Datasheet

SI4431BDY-T1-E3/BKN

Manufacturer Part Number

SI4431BDY-T1-E3/BKN

Description

P-CHANNEL 30-V (D-S) MOSFET

Manufacturer

Siliconix / Vishay

Datasheet

1.SI4431BDY-T1-E3BKN.pdf (6 pages)

Specifications of SI4431BDY-T1-E3/BKN

Channel Type

Current, Drain

–5.8 A

Fall Time

70 ns

Gate Charge, Total

20 nC

Operating And Storage Temperature

–55 to +150 °C

Package Type

SO-8

Polarization

P-Channel

Power Dissipation

1.5 W

Resistance, Drain To Source On

0.05 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

–55 °C

Thermal Resistance, Junction To Ambient

50 °C/W

Time, Rise

20 ns

Time, Turn-off Delay

110 ns

Time, Turn-on Delay

20 ns

Transconductance, Forward

18 S

Voltage, Breakdown, Drain To Source

-30 V

Voltage, Drain To Source

–30 V

Voltage, Forward, Diode

–1.1 V

Voltage, Gate To Source

±20 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

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Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72092

S09-0131-Rev. C, 02-Feb-09

Ordering Information:

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot

- 30

(V)

T op V i e w

SO-8

Si4431BDY-T1-E3 (Lead (Pb)-free)

Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

0.050 at V

0.030 at V

DS(on)

= 150 °C)

(Ω)

= - 4.5 V

= - 10 V

P-Channel 30-V (D-S) MOSFET

- 7.5

- 5.8

= 25 °C, unless otherwise noted

Steady State

(A)

t ≤ 10 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

• Halogen-free According to IEC 61249-2-21

•

Symbol

Available

TrenchFET

, T

thJA

thJF

stg

Power MOSFETs

Typical

- 7.5

- 6.0

- 2.1

10 s

2.5

1.6

- 55 to 150

P-Channel MOSFET

± 20

- 30

Steady State

Maximum

- 5.7

- 4.6

- 1.2

1.5

0.9

Vishay Siliconix

Si4431BDY

www.vishay.com

°C/W

Unit

°C

Related parts for SI4431BDY-T1-E3/BKN

SI4431BDY-T1-E3/BKN Summary of contents

Page 1

... Si4431BDY-T1-E3 (Lead (Pb)-free) Ordering Information: Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si4431BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72092 S09-0131-Rev. C, 02-Feb- °C J 0.8 1.0 1.2 1.4 Si4431BDY Vishay Siliconix 1600 1400 1200 C 1000 iss 800 600 400 C oss C rss 200 Drain-to-Source Voltage (V) DS Capacitance 1 7 ...

Page 4

... Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 emperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited by R DS(on D(on) 1 Limited ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72092. Document Number: 72092 S09-0131-Rev. C, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4431BDY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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