SI5441BDC-T1-GE3 Vishay, SI5441BDC-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI5441BDC-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 61A, 1206
• Manufacturer: Vishay

Specifications of SI5441BDC-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 61A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73207
S-83054-Rev. B, 29-Dec-08
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
= 6.1 A
On-Resistance vs. Drain Current
0.2
= 10 V
= 2.5 V
3
4
V
SD
Q
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
D
Gate Charge
- Drain Current (A)
6
8
T
0.6
J
= 150 °C
12
9
0.8
V
V
T
GS
GS
12
16
J
= 25 °C
1.0
= 3.6 V
= 4.5 V
15
1.2
20
1200
1000
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
- 25
C
GS
rss
= 6.1 A
iss
= 4.5 V
4
1
V
V
T
DS
0
GS
C
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
8
2
50
Vishay Siliconix
I
D
Si5441BDC
= 6.1 A
12
3
75
www.vishay.com
100
16
4
125
150
20
5
3