SI5441BDC-T1-GE3 Vishay, SI5441BDC-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI5441BDC-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 61A, 1206
• Manufacturer: Vishay

Specifications of SI5441BDC-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 61A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5441BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
0.05
0.2
0.02
0.1
Duty Cycle = 0.5
0
Threshold Voltage
T
J
- Temperature (°C)
25
Single Pulse
10
-3
50
I
D
= 250
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
µA
0.01
100
0.1
10
100
1
0.1
10
-2
Limited by R
* V
125
Limited
GS
I
D(on)
Single Pulse
T
> minimum V
C
V
= 25 °C
150
DS
Square Wave Pulse Duration (s)
DS(on) *
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10
BVDSS Limited
-1
GS
at which R
DS(on)
10
50
40
30
20
10
I
DM
0
1
10
is specified
Limited
-3
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
-2
100
Single Pulse Power
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
-1
JM
- T
Time (s)
t
A
1
S-83054-Rev. B, 29-Dec-08
= P
1
t
Document Number: 73207
2
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 80 °C/W
100
600
600