SIA431DJ-T1-GE3 Vishay, SIA431DJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA431DJ-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 12A
• Manufacturer: Vishay

Specifications of SIA431DJ-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -850mV
• Configuration: Single
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiA431DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.0
Soure-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
J
= 150 °C
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
- Temperature (°C)
25
I
D
0.6
50
= 250 µA
75
T
J
0.8
= 25 °C
0.01
100
0.1
10
100
1
0.1
1.0
Limited by R
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
A
GS
= 25 °C
> minimum V
150
V
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS
Limited
10
DS(on)
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
5
0
0.001
is specified
100 µs
1 ms
100 ms
1 s
10 s
10 ms
DC
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
= 2 A, 25 °C
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
I
I
2
D
D
= 2 A, 125 °C
Time (s)
= 6.5 A, 25 °C
I
D
= 6.5 A, 125 °C
S09-1536-Rev. A, 10-Aug-09
1
Document Number: 65267
3
10
4
100
1000
5