BSP149 Infineon Technologies, BSP149 Datasheet - Page 3

• Manufacturer Part Number: BSP149
• Description: N CH MOSFET, 200V, 480mA, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP149

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 480mA
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -1.4V
• Package: SOT-223
• Vds (max): 200.0 V
• Id (max): 0.66 A
• Idpuls (max): 2.6 A
• Rds (on) (max) (@10v): 1.8 Ohm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.2
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
I
V
T
V
T
V
di
D
D
A
j
GS
DD
GS
DD
GS
GS
R
=0.50 A, R
=0.05 A,
=25 °C
F
page 3
=25 °C
=100 V, I
/dt =100 A/µs
=-3 V, V
=100 V,
=-2…7 V,
=160 V,
=-3 to 5 V
=-3 V, I
F
F
DS
=0.66 A,
G
=0.5 A,
=6
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.74
0.16
typ.
326
5.1
3.4
5.6
0.9
41
17
45
21
11
42
60
-
-
max.
0.66
430
7.7
5.1
1.0
8.4
2.6
1.2
55
25
68
31
14
65
90
-
BSP149
2005-11-28
Unit
pF
ns
nC
V
A
V
ns
nC