BSP171P Infineon Technologies, BSP171P Datasheet - Page 6

• Manufacturer Part Number: BSP171P
• Description: P CH MOSFET, -60V, 1.45A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP171P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.45A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): 450.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
500
400
300
200
100
10
10
10
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1.9 A; V
typ.
20
10
GS
Ciss
Coss
-V
Crss
T
98 %
=-10 V
j
DS
60
[°C]
[V]
100
20
140
180
30
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
2.5
1.5
0.5
10
10
=f(T
SD
3
2
1
0
-1
-2
1
0
-60
)
0
j
); V
j
GS
-20
=V
150 °C, typ
DS
0.5
20
; I
D
=-460 µA
-V
min.
T
max.
typ.
j
SD
60
[°C]
[V]
150 °C, 98%
100
1
25 °C, 98%
25 °C, typ
BSP171P
140
2005-11-29
180
1.5