BSP315P Infineon Technologies, BSP315P Datasheet - Page 4

• Manufacturer Part Number: BSP315P
• Description: P CH MOSFET, -60V, 1.17A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP315P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.17A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 800.0 mOhm
• Rds (on) (max) (@4.5v): 1,400.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
Rev.1.3
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
= -48 V, I
= -48 V, I
= -48 V, I
= -48 V, I
= 0 V, I
F
F
F =
= -1.17 A
= I
D
D
D
D
l
S
S
= -1.17 A
= -1.17 A
= -1.17 A, V
= -1.17 A
, d i
, d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
gs
gd
g
rr
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
-3.14
-0.97
typ.
typ.
30.5
0.7
1.8
5.2
36
-
-
-1.17
-4.68
max.
max.
-1.3
BSP 315 P
1.1
2.6
7.8
46
54
2005-11-23
-
Unit
nC
V
Unit
A
V
ns
µC