BSS138N Infineon Technologies, BSS138N Datasheet - Page 7
![N CHANNEL MOSFET, 60V, 230mA SOT-23](/photos/19/8/190866/4467711_sml.jpg)
BSS138N
Manufacturer Part Number
BSS138N
Description
N CHANNEL MOSFET, 60V, 230mA SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BSS138N.pdf
(9 pages)
Specifications of BSS138N
Transistor Polarity
N Channel
Continuous Drain Current Id
230mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Package
SOT-23
Vds (max)
60.0 V
Rds (on) (max) (@10v)
3,500.0 mOhm
Rds (on) (max) (@4.5v)
6,000.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSS138N
Manufacturer:
INFINEON
Quantity:
36 000
Part Number:
BSS138N
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS138N 6327
Manufacturer:
INFINEON
Quantity:
3 468
Company:
Part Number:
BSS138N E6327
Manufacturer:
INFINEON
Quantity:
2 769
Part Number:
BSS138N E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS138N H6327
Manufacturer:
DIODES
Quantity:
13 469
Part Number:
BSS138N L6324
Manufacturer:
INFIN
Quantity:
20 000
Company:
Part Number:
BSS138N L6327
Manufacturer:
Infineon Technologies
Quantity:
42 447
Part Number:
BSS138N-T1-PF
Manufacturer:
ANALOGPOWER
Quantity:
20 000
Part Number:
BSS138NE6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.5
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
DD
D
=0.23 A pulsed
0.2
0.4
Q
12 V
gate
[nC]
0.6
48 V
0.8
30 V
1
page 7
14 Drain-source breakdown voltage
V
BR(DSS)
70
65
60
55
50
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
60
[°C]
100
BSS138N
140
2006-05-17
180