IRFB17N50LPBF Vishay, IRFB17N50LPBF Datasheet
IRFB17N50LPBF
Specifications of IRFB17N50LPBF
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IRFB17N50LPBF Summary of contents
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... Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • ZVS and High Frequency Circuit S • PWM Inverters N-Channel MOSFET TO-220AB IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L = 25 °C, unless otherwise noted) C SYMBOL °C C ...
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... IRFB17N50L, SiHFB17N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Transfer Characteristics 3 2.5 2.0 5.0 V 1.5 1.0 0.5 0 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix 150 ° ° μs PULSE WIDTH 5.0 9.0 6.0 7.0 8.0 10 Gate-to-Source Voltage ( 100 120 140 160 - 20 0 ...
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... IRFB17N50L, SiHFB17N50L Vishay Siliconix 1 000 000 iss = rss = oss = 000 C iss 1000 C oss 100 C rss 10 1 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 400 250 100 Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFB17N50L, SiHFB17N50L Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ ...
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... IRFB17N50L, SiHFB17N50L Vishay Siliconix 15 V Driver D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91098. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...