IRFB17N50LPBF Vishay, IRFB17N50LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB17N50LPBF
• Description: N CHANNEL MOSFET, 500V, 16A, TO-220
• Manufacturer: Vishay

Specifications of IRFB17N50LPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB17N50LPBF

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
This datasheet is subject to change without notice.
SYMBOL
V
C
R
V
oss
C
C
t
t
I
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
RRM
GSS
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
SM
t
I
t
t
on
thCS
thJC
DS
oss
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
T
V
V
T
T
V
V
V
J
J
GS
GS
J
J
V
GS
GS
GS
= 125 °C
= 125 °C
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C
= 25 °C
T
Reference to 25 °C, I
= 10 V
= 10 V
J
= 0 V
= 0 V
= 0 V
= 400 V, V
= 25 °C, I
R
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
TEST CONDITIONS
0.50
DD
DS
DS
DS
g
GS
-
-
= 7.5 , see fig. 10
= 500 V, V
= 250 V, I
= V
= 50 V, I
= 0 V, I
V
V
GS
V
I
V
F
DS
V
S
GS
GS
GS
DS
I
= 16 A, dI/dt = 100 A/μs
DS
D
= 16 A, V
= ± 30 V
V
= 25 V,
, I
= 16 A, V
= 0 V,
see fig. 6 and 13
= 400 V , f = 1.0 MHz
= 0 V, T
DS
= 1.0 V , f = 1.0 MHz
D
D
D
= 250 μA
= 250 μA
D
I
= 0 V to 400 V
GS
= 9.9 A
D
= 16 A,
= 9.9 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
= 0 V
b
b
= 400 V,
b
b
MAX.
b
0.56
D
S
c
62
-
b
MIN.
500
3.0
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0514-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91098
TYP.
2760
3690
0.28
325
159
170
220
470
810
0.6
7.3
37
84
21
51
50
28
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1210
0.32
130
250
330
710
5.0
2.0
1.5
S
50
33
59
16
64
11
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
mA
nA
μA
nC
nC
pF
ns
ns

V
V
S
A
V
A