2N7002BK NXP Semiconductors, 2N7002BK Datasheet
2N7002BK
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2N7002BK Summary of contents
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... V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching ...
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... T amb drain current amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code LN* Min - - [ ° 100 ° ≤ ...
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... T amb electrostatic discharge human body model voltage 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Min = 25 °C [ −55 − °C [1] - [3] - 120 ...
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... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET 017aaa036 (1) (2) (3) (4) (5) ( (V) DS Min Typ ...
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... FR4 PCB, mounting pad for drain 1 cm Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BK Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET 017aaa037 (s) p 017aaa038 ...
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... L rise time V GS turn-off delay time R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Min = 10 μ 250 μ 1 °C ...
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... V 3.0 4.0 V (V) DS Fig 7. 017aaa041 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET − (A) −4 10 (1) (2) (3) −5 10 −6 10 0.0 1.0 2 ° amb ...
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... GS Fig 11. Normalized drain-source on-state resistance 017aaa045 120 180 T (°C) amb Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET 2.4 a 1.8 1.2 0.6 0.0 − ...
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... Product data sheet 017aaa047 0.6 0.8 Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 2N7002BK Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET 2 0.6 (3×) Dimensions in mm Dimensions in mm preferred transport direction during soldering © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002BK v.1 20100617 2N7002BK Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 2N7002BK 60 V, 350 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002BK All rights reserved. Date of release: 17 June 2010 Document identifier: 2N7002BK ...