BSS138P NXP Semiconductors, BSS138P Datasheet - Page 9

• Manufacturer Part Number: BSS138P
• Description: MOSFET,N CH,60V,0.36A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSS138P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.9ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes

NXP Semiconductors
BSS138P
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
(1) T
(2) T
GS
5.0
4.0
3.0
2.0
1.0
0.0
0.0
I
charge; typical values
V
D
amb
amb
GS
= 300 mA; V
= 0 V
= 150 °C
= 25 °C
0.2
DS
= 30 V; T
0.4
amb
(A)
I
S
= 25 °C
1.2
0.8
0.4
0.0
0.6
0.0
All information provided in this document is subject to legal disclaimers.
Q
017aaa119
G
(nC)
Rev. 1 — 2 November 2010
0.8
0.4
Fig 15. Gate charge waveform definitions
(1)
0.8
V
(2)
V
SD
V
V
V
GS(pl)
017aaa120
DS
GS(th)
GS
60 V, 360 mA N-channel Trench MOSFET
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
BSS138P
© NXP B.V. 2010. All rights reserved.
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