BUK6207-55C NXP Semiconductors, BUK6207-55C Datasheet - Page 7

• Manufacturer Part Number: BUK6207-55C
• Description: MOSFET,N CH,55V,90A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6207-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 6.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK6207-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
g
(S)
(A)
I
fs
120
D
100
90
60
30
80
60
40
20
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
V
Transfer characteristics: drain current as a
0
0
j
DS
Characteristics
= 25°C; V
= 25 V
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
20
DS
T
= 25 V
j
2
= 175 °C
…continued
40
3
T
j
60
= 25 °C
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
4
003aae893
DS
003aae891
I
V
= 25 A; V
= 20 A; dI
D
GS
(A)
Figure 16
= 25 V
(V)
Rev. 2 — 17 September 2010
80
5
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(A)
I
DSon
D
100
N-channel TrenchMOS intermediate level FET
80
60
40
20
20
15
10
0
5
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
GS
0
0
j
j
= 25°C; t
= 25°C; I
= 0 V;
V
GS
(V) = 10
0.5
4
p
D
= 300 μs
25 A
5
4.5
BUK6207-55C
Min
-
-
-
1
8
Typ
0.85
48
86
1.5
12
© NXP B.V. 2010. All rights reserved.
V
003aae892
V
003aae894
GS
DS
Max
1.2
-
-
3.6
3.8
3.4
3.2
(V)
4
(V)
16
2
Unit
V
ns
nC
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