BUK6215-75C NXP Semiconductors, BUK6215-75C Datasheet

MOSFET,N CH,75V,57A,SOT428

BUK6215-75C

Manufacturer Part Number
BUK6215-75C
Description
MOSFET,N CH,75V,57A,SOT428
Manufacturer
NXP Semiconductors
Datasheet
1.BUK6215-75C118.pdf (14 pages)

Specifications of BUK6215-75C

Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
12.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D-PAK
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK6215-75C
N-channel TrenchMOS FET
Rev. 02 — 4 October 2010
AEC Q101 compliant
Compatable with logic and standard
level gate drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Engine management
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source voltage T
drain current
total power
dissipation
drain-source
on-state resistance
Conditions
V
see
T
V
see
j
mb
GS
GS
≥ 25 °C; T
Figure 1
Figure 11
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 15 A; T
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
j
= 25 °C;
Min
-
-
-
-
Product data sheet
Typ
-
-
-
12.5 15
Max Unit
75
57
128
V
A
W
mΩ

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BUK6215-75C Summary of contents

Page 1

... BUK6215-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... see GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET Min ≤ sup = Figure 13; Graphic symbol G mbb076 3 Typ ...

Page 3

... Figure °C; see Figure ° ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure 229 - 128 -55 175 -55 175 ...

Page 4

... Product data sheet 003aae770 150 200 ( ° Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature μs 100 μ 100 ms ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6215-75C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET Min Typ Max - - 1.17 003aae742 t δ ...

Page 6

... Ω G(ext) from upper edge of drain mounting base to centre of die from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2 ...

Page 7

... 003aae760 (A) D Fig 6. 003aae762 R (m Ω ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET Min Typ = 25 ° 117 60 10.0 6 0.5 1 Output characteristics: drain current as a function of drain-source voltage; typical values ...

Page 8

... T (°C) j Fig 10. Sub-threshold drain current as a function of 003aae766 4.0 V (V) = 4.5 GS 5.0 10 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET - min typ max - gate-source voltage ...

Page 9

... Product data sheet Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae769 C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET ( 14V V = 60V charge; typical values ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET min 10.4 2.95 2.285 4.57 0.5 9.6 2 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6215-75C v.2 20101004 • Modifications: Status changed from objective to product. • Various changes to content. BUK6215-75C v.1 20100908 BUK6215-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6215-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6215-75C ...

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