BUK624R5-30C NXP Semiconductors, BUK624R5-30C Datasheet - Page 9

MOSFET,N CH,30V,90A,SOT428

BUK624R5-30C

Manufacturer Part Number
BUK624R5-30C
Description
MOSFET,N CH,30V,90A,SOT428
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK624R5-30C

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3800µohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOT-428
Rohs Compliant
Yes
NXP Semiconductors
BUK624R5-30C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
C
C
C
003aaa508
003aae309
is s
os s
rs s
(V)
Rev. 2 — 17 September 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
(V)
I
S
GS
100
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
V
0.3
20
DS
= 14V
T
j
BUK624R5-30C
= 175 °C
0.6
40
0.9
60
T
© NXP B.V. 2010. All rights reserved.
j
= 25 °C
Q
003aae313
003aae311
V
G
24V
SD
(nC)
(V)
1.2
80
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