BUK652R0-30C NXP Semiconductors, BUK652R0-30C Datasheet - Page 14
![MOSFET,N CH,30V,120A,SOT78](/photos/41/53/415315/sot078a_3d_sml.gif)
BUK652R0-30C
Manufacturer Part Number
BUK652R0-30C
Description
MOSFET,N CH,30V,120A,SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.BUK652R0-30C127.pdf
(15 pages)
Specifications of BUK652R0-30C
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
NXP Semiconductors
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10. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BUK652R0-30C
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 September 2010
salesaddresses@nxp.com
9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
N-channel TrenchMOS intermediate level FET
Trademarks
BUK652R0-30C
© NXP B.V. 2010. All rights reserved.
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