BUK652R3-40C NXP Semiconductors, BUK652R3-40C Datasheet - Page 7

• Manufacturer Part Number: BUK652R3-40C
• Description: MOSFET,N CH,40V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R3-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK652R3-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(mΩ)
(S)
g
DSon
fs
250
200
150
100
50
0
8
6
4
2
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
5
40
…continued
10
60
15
Conditions
I
see
I
V
80
All information provided in this document is subject to legal disclaimers.
S
S
DS
003aae282
V
003aae251
= 25 A; V
= 20 A; dI
GS
I
D
Figure 15
= 25 V
(A)
(V)
100
20
Rev. 2 — 18 August 2010
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(A)
(A)
I
I
D
D
100
N-channel TrenchMOS intermediate level FET
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
GS
0
0
= 0 V;
10
0.2
5
1
4
3.8
BUK652R3-40C
0.4
T
j
Min
-
-
-
= 175 ° C
2
0.6
Typ
0.8
63
127
V
3
GS
© NXP B.V. 2010. All rights reserved.
0.8
T
003aae248
(V) = 3.2
003aae249
V
j
= 25 ° C
GS
V
Max
1.2
-
-
DS
(V)
3.6
3.3
3.4
(V)
1
4
Unit
V
ns
nC
7 of 15