BUK6607-75C NXP Semiconductors, BUK6607-75C Datasheet
BUK6607-75C
Specifications of BUK6607-75C
Related parts for BUK6607-75C
BUK6607-75C Summary of contents
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... BUK6607-75C N-channel TrenchMOS FET Rev. 2 — 17 November 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET Min ≤ sup = Figure 13; Graphic symbol G mbb076 ...
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... Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 [3] Figure 423 - ...
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... Product data sheet 003aad039 P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6607-75C Product data sheet Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET Min Typ Max - - 0.74 003aae545 t P δ = ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET Min Typ Max Unit 1.8 2.3 2.8 ...
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... V (V) DS Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET Min Typ Max - 0.8 1 129 - 003aad040 003aae883 = 175 ° ...
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... Fig 10. Gate-source threshold voltage as a function of 003aae884 4.5 5.0 6.0 10.0 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 ...
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... BUK6607-75C Product data sheet Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae552 (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET ( 100 T = 25° ...
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... H D max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6607-75C v.2 20101117 • Modifications: Status changed from objective to product. BUK6607-75C v.1 20090323 BUK6607-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK6607-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 November 2010 Document identifier: BUK6607-75C ...