BUK661R8-30C NXP Semiconductors, BUK661R8-30C Datasheet - Page 8

• Manufacturer Part Number: BUK661R8-30C
• Description: MOSFET,N CH,30V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R8-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK661R8-30C
Product data sheet
Fig 7.
Fig 9.
(A)
(S)
g
I
D
10
10
10
10
10
10
200
150
100
fs
50
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
25
1
min
50
2
typ
max
75
3
All information provided in this document is subject to legal disclaimers.
003aae295
003aad806
V
I
GS
D
(A)
(V)
Rev. 02 — 28 December 2010
100
4
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
(mΩ)
R
V
DSon
GS(th)
(V)
N-channel TrenchMOS intermediate level FET
15
12
4
3
2
1
0
9
6
3
0
-60
of gate-source voltage; typical values.
junction temperature
Drain-source on-state resistance as a function
0
0
4
BUK661R8-30C
max @1mA
min @2.5mA
typ @1mA
60
8
120
12
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aae365
V
j
GS
(°C)
(V)
180
16
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