BUK662R7-55C NXP Semiconductors, BUK662R7-55C Datasheet - Page 4

• Manufacturer Part Number: BUK662R7-55C
• Description: MOSFET,N CH,55V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK662R7-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK662R7-55C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
D
I
10
D
10
10
250
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aae196
mb
DS
1
(°C)
/ I
D
Rev. 01 — 7 September 2010
200
DC
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK662R7-55C
100
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
003aae197
t
mb
p
100 μ s
1 ms
10 ms
100 ms
=10 μ s
03na19
(°C)
10
200
2
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