PSMN017-30LL NXP Semiconductors, PSMN017-30LL Datasheet - Page 10

MOSFET,N CH,30V,15A,QFN3333

PSMN017-30LL

Manufacturer Part Number
PSMN017-30LL
Description
MOSFET,N CH,30V,15A,QFN3333
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN017-30LL

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
QFN
Rohs Compliant
Yes
NXP Semiconductors
PSMN017-30LL
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Gate-source voltage as a function of gate charge; typical values
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
-1
1
10
V
V
(V)
All information provided in this document is subject to legal disclaimers.
DS
GS
003aae264
C
7.5
2.5
C
C
10
(V)
iss
oss
5
0
rss
0
10
2
Rev. 03 — 7 July 2010
3
6V
24V
N-channel QFN3333 30 V 17 mΩ logic level MOSFET
Fig 16. Source (diode forward) current as a function of
6
(A)
I
S
20
15
10
5
0
source-drain (diode forward) voltage; typical
values
0
V
9
DS
Q
= 15V
003aae267
G
(nC)
0.3
12
T
PSMN017-30LL
j
= 150 °C
0.6
0.9
T
© NXP B.V. 2010. All rights reserved.
j
= 25 °C
003aae268
V
SD
(V)
1.2
10 of 15

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