PSMN022-30PL NXP Semiconductors, PSMN022-30PL Datasheet - Page 9

• Manufacturer Part Number: PSMN022-30PL
• Description: MOSFET,N CH,30V,TO-220
• Manufacturer: NXP Semiconductors

Specifications of PSMN022-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 27mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN022-30PL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
V
GS (th)
(V)
100
80
60
40
20
3
2
1
0
0
-60
junction temperature
of drain current; typical values
0
0
3
10
max
min
typ
60
3.5
20
V
120
GS
I
(V) = 4.5
All information provided in this document is subject to legal disclaimers.
D
003a a d423
003a a c982
T
(A)
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10
Rev. 02 — 1 November 2010
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30
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
N-channel 30 V 22 mΩ logic level MOSFET
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
PSMN022-30PL
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
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