PSMN023-80LS NXP Semiconductors, PSMN023-80LS Datasheet - Page 7

• Manufacturer Part Number: PSMN023-80LS
• Description: MOSFET,N CH,80V,34A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN023-80LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN023-80LS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
C
(A)
I
2000
1500
1000
10
10
10
10
10
10
D
500
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage, typical values
gate-source voltage
f = 1 MHz; V
Input and reverse transfer capacitances as a
0
0
2
C
C
DS
iss
rss
2
= 0 V
4
min
typ
6
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
003aae507
V
003aae487
GS
(V)
(V)
10
Rev. 2 — 18 August 2010
6
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
5
4
3
2
1
0
3
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN023-80LS
max
min
typ
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae514
T
003aae486
T
j
j
(°C)
( ° C)
180
180
7 of 14