PSMN039-100YS NXP Semiconductors, PSMN039-100YS Datasheet - Page 7

• Manufacturer Part Number: PSMN039-100YS
• Description: MOSFET,N CH,100V,28.1A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 30.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN039-100YS_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
C
(S)
g
2000
1500
1000
fs
500
50
40
30
20
10
0
0
drain current; typical values
as a function of drain-source voltage; typical
values
Forward transconductance as a function of
Input, output and reverse transfer capacitances
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
5
4
10
8
…continued
15
12
Conditions
I
see
I
V
S
S
DS
= 15 A; V
= 5 A; dI
20
16
Figure 17
All information provided in this document is subject to legal disclaimers.
= 50 V
003aae096
003aae097
V
I
GS
D
(A)
C
C
(V)
iss
rss
S
GS
25
20
/dt = 100 A/µs; V
Rev. 02 — 2 April 2010
= 0 V; T
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
j
= 25 °C;
Fig 6.
Fig 8.
GS
(A)
(A)
I
D
I
D
= 0 V;
20
15
10
30
20
10
5
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
1
0.5
PSMN039-100YS
2
T
j
10
= 175 ° C
Min
-
-
-
6.5
3
1
5.5
5
Typ
0.8
44
78
4
V
T
1.5
GS
j
© NXP B.V. 2010. All rights reserved.
= 25 ° C
(V) = 4.55
003aae095
003aae094
V
5
Max
1.2
-
-
V
DS
GS
(V)
(V)
6
2
Unit
V
ns
nC
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