PSMN045-80YS NXP Semiconductors, PSMN045-80YS Datasheet - Page 7

• Manufacturer Part Number: PSMN045-80YS
• Description: MOSFET,N CH,80V,24A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN045-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 37mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN045-80YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
1000
(pF)
(A)
C
800
600
400
200
I
40
30
20
10
D
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
2
Characteristics
C
C
iss
rss
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
10
4
8
6
4
…continued
6
6
V
GS
8
(V) =
All information provided in this document is subject to legal disclaimers.
8
V
5.5
003aad046
003aad052
V
GS
DS
(V)
4.5
(V)
5
Rev. 02 — 25 October 2010
Conditions
I
see
I
V
10
10
S
S
GS
= 15 A; V
= 5 A; dI
Figure 16
= 0 V; V
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
S
GS
/dt = 100 A/µs;
DS
Fig 6.
Fig 8.
= 0 V; T
= 40 V
(S)
g
R
(mΩ)
fs
DSon
100
35
30
25
20
15
10
80
60
40
20
5
0
of drain current; typical values
drain current; typical values
j
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
= 25 °C;
V
10
GS
10
(V) =
PSMN045-80YS
20
5
Min
-
-
-
20
30
Typ
0.82
32
42
30
5.5
© NXP B.V. 2010. All rights reserved.
40
003aad047
003aad053
I
D
I
D
6
(A)
Max
1.2
-
-
(A)
8
10
20
40
50
Unit
V
ns
nC
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