SI7456DP-TI-GE3 Vishay, SI7456DP-TI-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7456DP-TI-GE3
• Description: MOSFET, N, SO-8
• Manufacturer: Vishay

Specifications of SI7456DP-TI-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.7A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 8.8ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71603.
www.vishay.com
4
- 0.5
- 1.0
- 1.5
0.5
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
0.0001
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
- 25
Single Pulse
Single Pulse
0
Threshold Voltage
T
J
10
25
- Temperature (°C)
-3
0.02
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
= 250 μA
0.001
75
0.05
10
100
-2
125
Square Wave Pulse Duration (s)
150
Square Wave Pulse Duration (s)
10
-1
0.01
50
40
30
20
10
1
0
0.01
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
0.1
DM
JM
- T
1
t
Time (s)
A
1
= P
S09-0271-Rev. F, 16-Feb-09
t
2
Document Number: 71603
DM
Z
10
thJA
100
thJA
t
t
1
2
(t)
= 52 °C/W
100
600
1
600