STQ1NK60ZR-AP STMicroelectronics, STQ1NK60ZR-AP Datasheet - Page 3

• Manufacturer Part Number: STQ1NK60ZR-AP
• Description: MOSFET N CH 600V 0.3A TO92
• Manufacturer: STMicroelectronics

Specifications of STQ1NK60ZR-AP

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes

STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
Table 4.
V
Symbol
Symbol
R
Symbol
dv/dt
ESD(G-D)
R
I
SD
P
DM
R
V
thj-case
V
T
thj-lead
E
T
I
I
TOT
I
GS
thj-a
T
DS
stg
AR
D
D
AS
≤ 0.3A, di/dt ≤ 200A/µs, V
J
(1)
l
(2)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
=80%V
Parameter
Parameter
C
= 25°C
Parameter
GS
(BR)DSS
= 0)
C
C
=100°C
= 25°C
IPAK
0.24
IPAK
0.8
0.5
3.2
25
100
275
--
5
-55 to 150
TO-92
0.25
Value
TO-92
0.3
± 30
600
800
3
4.5
Value
120
40
--
0.189
1.2
Value
260
0.8
SOT-223
60
Electrical ratings
SOT-223
0.26
37.87
0.3
3.3
--
--
(1)
W/°C
Unit
V/ns
°C/W
°C/W
°C/W
°C
Unit
W
V
V
A
A
A
V
Unit
°C
mJ
A
3/16