STQ1NK60ZR-AP STMicroelectronics, STQ1NK60ZR-AP Datasheet - Page 5

• Manufacturer Part Number: STQ1NK60ZR-AP
• Description: MOSFET N CH 600V 0.3A TO92
• Manufacturer: STMicroelectronics

Specifications of STQ1NK60ZR-AP

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes

STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 9.
1.
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
GSO
d(on)
d(off)
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source zener diode
Parameter
Parameter
Parameter
V
R
(see Figure 20)
I
I
di/dt = 100A/µs,
V
I
di/dt = 100A/µs,
V
Igs=±1mA (open drain)
SD
SD
SD
DD
DD
DD
G
=4.7Ω, V
=0.8A, V
=0.8A,
=0.8A,
Test conditions
Test conditions
=300 V, I
=20V, Tj=25°C
=20V, Tj=150°C
Test conditions
GS
GS
D
= 0.4A,
=0
=10V
Electrical characteristics
Min.
Min
Min.
30
Typ.
Typ.
135
216
140
224
5.5
Typ.
13
28
3.2
3.2
5
Max.
Max
Max.
0.8
2.4
1.6
Unit
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
V
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