SUP90N15-18P-E3 Vishay, SUP90N15-18P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP90N15-18P-E3
• Description: MOSFET, N, TO-220
• Manufacturer: Vishay

Specifications of SUP90N15-18P-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Configuration: Single
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 3.75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69935
S-80181-Rev. A, 04-Feb-08
0.10
0.08
0.06
0.04
0.02
0.00
180
150
120
100
90
60
30
80
60
40
20
0
0
0
0
0
On-Resistance vs. Gate-to-Source Voltage
T
C
= 25 °C
1
2
8
V
V
GS
DS
V
Output Characteristics
GS
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Transconductance
I
= 10 thru 7 V
D
- Drain Current (A)
16
2
4
T
C
24
3
6
= - 55 °C
T
T
C
I
V
T
D
A
A
V
GS
= 125 °C
= 20 A
= 150 °C
GS
32
= 25 °C
4
8
= 5 V
= 6 V
10
40
5
6000
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
60
50
40
30
20
10
0
0
0
0
0
C
rss
20
On-Resistance vs. Drain Current
V
V
10
DS
Transfer Characteristics
2
GS
V
T
GS
- Drain-to-Source Voltage (V)
C
- Gate-to-Source Voltage (V)
40
I
T
D
C
= 125 °C
C
= 10 V
C
Capacitance
iss
oss
- Drain Current (A)
= 25 °C
SUP90N15-18P
20
60
4
Vishay Siliconix
80
T
C
30
= - 55 °C
6
www.vishay.com
100
120
40
8
3