SUD45P03-15-E3 Vishay, SUD45P03-15-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD45P03-15-E3
• Description: P CHANNEL MOSFET, -30V, 13A, TO-252
• Manufacturer: Vishay

Specifications of SUD45P03-15-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 13A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 13 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD45P03-15
Siliconix
Notes
a.
b. Pulse test; pulse width
c.
1-52
Specifications (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
c
c
a
Parameter
c
c
c
c
c
b
b
b
b
300 s, duty cycle
S-57253—Rev. F, 24-Feb-98
J
= 25 C Unless Otherwise Noted)
b
b
V
Symbol
V
r
(BR)DSS
I
I
DS(on)
t
t
I
I
I
C
V
D( )
D(on)
C
C
Q
d(off)
GS(th)
Q
d(on)
I
GSS
DSS
DSS
g
Q
SM
t
t
t
oss
rss
SD
rr
fs
iss
gd
gs
r
f
g
2%.
I
V
D
V
V
C
Siliconix was formerly a division of TEMIC Semiconductors
DS
V
DS
GS
= 25 C)
GS
= –15 V, V
–45 A, V
I
= –30 V, V
= –10 V, I
V
V
V
F
V
V
V
= 0 V, V
V
V
V
V
DS
DS
DD
= –45 A, di/dt = 100 A/ s
DS
GS
I
DS
GS
GS
DS
DS
F
Phone [phone]
Test Condition
= –45 A, V
= –4.5 V, I
= –15 V, R
= V
= 0 V, V
= –5 V, V
= 0 V, I
= –5 V, V
= –10 V, I
= –15 V, I
= –30 V, V
GEN
DS
GS
D
GS
GS
= –13 A, T
, I
= –25 V, F = 1 MHz
= –10 V, I
= –10 V, R
D
D
GS
= 0 V, T
GS
= –250 A
GS
= –250 A
D
D
D
GS
L
=
GS
= –13 A
= –13 A
= –13 A
= 0.33
= –4.5 V
= –10 V
= 0 V
= 0 V
20 V
J
J
D
= 125 C
= 125 C
G
= –45 A
= 2.4
FaxBack [phone]
Min
–1.0
–30
–50
–20
20
Typ
0.012
0.018
0.020
3200
800
280
6.2
1.0
50
14
13
10
50
20
55
www.siliconix.com
a
Max
0.015
0.026
0.024
–50
125
100
100
100
1.5
–1
20
20
40
100
Unit
nA
nC
pF
ns
ns
ns
V
V
A
A
A
V
S
A
A